? semiconductor components industries, llc, 2010 april, 2010 ? rev. 8 1 publication order number: tip47/d tip47g, tip48g, TIP50G high voltage npn silicon power transistors this series is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. features ? 250 v to 400 v (min) ? v ceo(sus) ? 1 a rated collector current ? popular to ? 220 plastic package ? these devices are pb ? free and are rohs compliant* maximum ratings rating symbol tip47 tip48 tip50 unit collector ? emitter voltage v ceo 250 300 400 vdc collector ? base voltage v cb 350 400 500 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak i c 1.0 2.0 adc base current i b 0.6 adc total power dissipation @ t c = 25 c derate above 25 c p d 40 0.32 w w/ c total power dissipation @ t c = 25 c derate above 25 c p d 2.0 0.016 w w/ c unclamped inducting load energy (see figure 8) e 20 mj operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 3.125 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1.0 ampere power transistors npn silicon 250 ? 300 ? 400 volts 40 watts see detailed ordering and shipping information in the package dimensions sect ion on page 2 of this data sheet. ordering information http://onsemi.com to ? 220ab case 221a style 1 marking diagram 1 2 3 4 tipxx = device code xx = 47, 48, or 50 a = assembly location y = year ww = work week g = pb ? free package tipxxg ayww
tip47g, tip48g, TIP50G http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 1) tip47 (i c = 30 madc, i b = 0) tip48 tip50 ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ? ? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ??? ??? ??? ??? ? ? ? ???? ???? ???? ???? 1.0 1.0 1.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? ? ? ? ???? ???? ???? ???? ???? 1.0 1.0 1.0 ??? ??? ??? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 1.0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ? ??? ??? ??? ??? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 1.0 adc, i b = 0.2 adc) ????? ????? ??? ??? ? ???? ???? 1.0 ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 1.0 adc, v ce = 10 vdc) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 1.5 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (i c = 0.1 adc, v ce = 10 vdc, f = 2.0 mhz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? mhz ?????????????????????? ?????????????????????? ? signal current gain (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 khz) ????? ????? ??? ??? ???? ???? ? ??? ??? 1. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information device package shipping tip47 to ? 220 50 units / rail tip47g to ? 220 (pb ? free) 50 units / rail tip48 to ? 220 50 units / rail tip48g to ? 220 (pb ? free) 50 units / rail tip49 to ? 220 50 units / rail tip49g to ? 220 (pb ? free) 50 units / rail tip50 to ? 220 50 units / rail TIP50G to ? 220 (pb ? free) 50 units / rail
tip47g, tip48g, TIP50G http://onsemi.com 3 figure 1. power derating t c , case temperature ( c) 0 100 0 10 160 20 30 60 80 40 140 40 20 120 p d , power dissipation (watts) t c t c 0 1 2 3 4 t a t a turn-on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn-off pulse t 3 t 1 7.0 ns 100 < t 2 < 500 s t 3 < 15 ns duty cycle 2.0% approx -9.0 v r b and r c varied to obtain desired current levels. scope r c r b v cc v in c jd << c eb -4.0 v figure 2. switching time equivalent circuit 0.02 figure 3. turn ? on time i c , collector current (amps) 0.01 0.1 2.0 1.0 t j = 25 c v cc = 200 v i c /i b = 5.0 t, time (s) 0.5 0.2 0.1 0.05 0.05 0.5 0.02 1.0 t r 0.2 t d t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalize d 1.0 1.0 100 z jc(t) = r(t) r jc r jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.2 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.02 0.01 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50
tip47g, tip48g, TIP50G http://onsemi.com 4 v ce , collector-emitter voltage (volts) 10 20 5.0 50 500 figure 5. active region safe operating area 0.02 0.05 secondary breakdown limited thermally limited @ 25 c bonding wire limited 1.0ms dc 100 s 0.2 0.1 5.0 2.0 i c , collector current (amps) curves apply below rated v ceo 1.0 0.5 100 200 500 s t c 25 c tip47 tip48 tip50 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depen ding on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.02 0.5 i c , collector current (amps) figure 6. turn ? off time 5.0 t, time (s) 2.0 1.0 0.5 0.2 0.1 0.05 1.0 2.0 t s t j = 25 c v cc = 200 v i c /i b = 5.0 t f i c , collector current (amps) +4.5 v , temperature coefficients (mv/ c) +3.5 +2.5 +1.5 0 -0.5 -1.5 -2.5 *applies for i c /i b h fe /5 vc for v ce(sat) vb for v be figure 7. temperature coefficients 0.02 0.05 0.1 0.2 0.5 1.0 2.0 +25 c to +150 c -55 c to +25 c +25 c to +150 c -55 c to +25 c +0.5 figure 8. inductive load switching note a: input pulse width is increased until i cm = 0.63 a. input 50 mje171 r bb1 = 150 100 mh r bb2 = 100 v bb2 = 0 v bb1 = 10 v v ce monitor tut v cc = 20 v i c monitor r s = 0.1 50 0.63 a 0 v -5 v t w 3 ms (see note a) input voltage collector current collector voltage v cer 0 v 10 v 100 ms v ce(sat)
tip47g, tip48g, TIP50G http://onsemi.com 5 i c , collector current (amps) h fe , dc current gain figure 9. dc current gain 100 200 0.04 0.06 0.2 2.0 0.02 60 40 20 10 6.0 4.0 0.1 figure 10. ?on? voltages v ce = 10 v 2.0 0.6 1.0 0.4 25 c t j = 150 c -55 c 1.4 0.02 i c , collector current (amps) 1.0 0.8 0.4 1.2 0.6 0.2 0 0.04 0.06 0.1 0.2 0.4 0.6 v, voltage (volts) 1.0 2.0 v be(sat) @ i c /i b = 5.0 v v be(on) @ v ce = 4 v v ce(sat) @ i c /i b = 5.0 v
tip47g, tip48g, TIP50G http://onsemi.com 6 package dimensions to ? 220ab case 221a ? 09 issue af style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. tip47/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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